SiC SBDs (silicon carbide Schottky barrier diodes) are small semiconductor devices or one-way switches widely used in power conversion systems. They leverage the unique characteristics of silicon carbide, including high thermal conductivity, extremely low coefficient for thermal expansion, and high resistance to thermal shock. Compared to standard diodes, silicon carbide SBDs are known for their superior efficiency. They can operate at high current density with a low forward voltage drop, resulting in less wasted energy. Traditionally, the production process for silicon carbide diodes has been complicated and costly. However, through a research collaboration with QMF, Quest has developed new patented processes that significantly speed up production and reduce costs. By incorporating standard procedures used in SiC wafer manufacturing, the design of these components has been revolutionized. This allows for the timely and cost-effective facilitation of customer specifications regarding forward voltage and current rating. The reduced fabrication time and lower costs result in more affordable prices for customers. As a result, SiC SBDs are in high demand, especially in the production of solar inverters, motor drives, electric car chargers, and uninterruptible power supplies. Currently, Quest offers SiC SBDs that operate within a voltage range of 600-4500V. However, ongoing research indicates the potential for even higher voltage ranges. The available options include SiC SBDs in the TO247 package or as wafer-level bare die silicon carbide Schottky diodes, with voltage ranges from 650-4500V.Quest has earned an outstanding reputation for delivering customized solutions to customers of all sizes and operating platforms. In addition to being SiC Schottky diode manufacturers, Quest's expertise extends to power modules, TCIGBTs, wafers in various sizes, sensors, SiC membranes, and JFETs. Versatility is a key aspect of Quest's business model, and they are dedicated to meeting specific customer requirements promptly and precisely. Feel free to contact Quest to discuss your needs.With centers in Australia, Scotland, and Spain. Quest offers a global network of customer service and support across all time zones, ensuring customers' peace of mind. Quest's mission is to produce and provide power modules and associated products that meet the specific needs and applications of their customers. As leading SiC Schottky diode manufacturers, their goal is to offer a range of SiC SBDs, SiC wafers, and bare die SiC Schottky diodes that deliver on quality and price while maintaining the highest levels of SiC performance.Affordable silicon carbide diodes have significantly improved performance levels. These diodes offer superior switching performance efficiency, greater power density, low forward voltage drop, high surge voltage capabilities, and a positive temperature coefficient, all at lower system costs compared to previous technologies. Quest specializes in bare die SiC Schottky diodes within the high voltage range of 650V to 4500V, which are unparalleled in the market. Their TCIGBT power modules complement the SiC Schottky barrier diodes, offering reliable and effective high voltage switching technology. With increasing applications in industries such as renewable power and automotive, the demand for high-performance silicon carbide Schottky diodes is set to rise. Quest is at the forefront of meeting this demand. Regardless of the size of your operation, if you require industrial solutions like silicon carbide SBDs, Quest has the expertise and experience in manufacturing SiC wafers to customer-led specifications. They can assist you in a cost-effective and timely manner. Let Quest help you optimize your products in the global market. SiC SBDs (silicon carbide Schottky barrier diodes) are crucial components used in various applications across multiple industries. Quest, in collaboration with the QMF team, manufactures SiC wafers, bare die, homogeneous high voltage SBDs, and other associated products for high voltage switching applications. The emergence of silicon carbide in semiconductor components has brought significant benefits to the industry. It outperforms its predecessors by offering high-speed operation at higher voltages due to its high dielectric breakdown field, which is approximately ten times that of silicon. Furthermore, it exhibits virtually no dependence on temperature or current. The reverse recovery time (trr) is significantly improved, resulting in reduced losses and higher efficiency. The reverse current is almost negligible, allowing for enhanced miniaturization of silicon carbide SBDs. At Quest, a leading SiC Schottky manufacturer in Australia, we prioritize meeting our customers' needs in a timely and cost-effective manner. We have diverse manufacturing capabilities to fulfill specific requests if our off-the-shelf selection of bare die SiC Schottky diodes and wafers doesn't perfectly suit your application. We are happy to collaborate with companies and projects of all sizes to provide custom-made components tailored to your exact requirements. With our affiliates, we have a global presence, and our SiC diode manufacturing facilities supply Australia, USA, and South-East Asia. We are open to collaborating with forward-thinking and innovative companies worldwide.