SiC SBDs are small semi-conductor devices or one-way switches that are widely used in power
conversion systems that rely heavily on the characteristics of silicon carbide – in that it is highly
thermally conductive, has an extremely low coefficient for thermal expansion and is also highly resistant
to thermal shock. In general, silicon carbide SBDs are considered to be significantly more efficient than
standard diodes, being able to operate at high current density with a low forward voltage drop that
result in less wasted energy.
The downside of silicon carbide diodes is that the production process has traditionally been complicated
and relatively costly but through the research collaboration that Quest have established with QMF, new
patented processes are now available that dramatically speed up and reduce the cost of the
process. Incorporating production steps that are standard procedure in the manufacture of SiC wafers
has revolutionized the design of these components and also allows customer specifications in regard to
forward voltage and current rating to be facilitated in a timely and cost-effective manner. Low
fabrication time and reduced costs all results in lower prices for the customers and the product will be in
high demand particularly in the production of solar inverters, motor drives, electric car chargers and
other users of uninterruptable power supplies.
Queensland Semiconductor Technologies (Quest) have rapidly established themselves at the very forefront of pioneering new technologies in the production of all kinds of semiconductors which are themselves integral to groundbreaking developments in many industries, no less so than in aerospace and military applications.
Through continuing collaborative research and development, in particular with Griffith University of Queensland, Quest have developed a new patented manufacturing process for the mass production of SiC Schottky barrier diodes, that due to the reduction in power required for ion implantation results in favourable production costs, which enables Quest to compete with already established semiconductor manufacturers around the globe, and has also helped to establish Australia as a recognised centre of excellence in the industry.
Maintaining pace with the ever-changing technological landscape requires commitment, dedication and innovation, qualities that are at the heart of the Quest operation where excellence is considered standard and the faultless performance of their semiconductors is matched with longevity.
With the capability to produce not just homogenous SiC Schottky barrier diodes but SiC wafers, IGBT, CIGBT and SiC Mosfets, Quest is on course to become a dominant global distributer of a diverse range semiconductors that will be a significant part of future advances in technology in renewable energy and electric powered vehicles.
In recent years there have been unprecedented advances in many aspects of technological innovation, and there is little to suggest that this rate of progress will be slowed at any time soon and Quest will strive to be at the cutting edge of semiconductor development.
