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QS120C080YL | 36A 1200V 80mΩ SiC MOSFET | TO247-3L
The QS120C080YL is a 1200V N-channel Silicon Carbide MOSFET in a TO-3P package, offering fast switching with low EMI/RFI, low capacitances and a low RDS(ON) temperature coefficient, ideal for on-board chargers and 6.6kW DC/DC modules.
$18.360
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1200V
36A
SiC MOSFET
The QS120C080YL is a 1200V N-channel Silicon Carbide MOSFET in a TO247-3L package, offering fast switching with low EMI/RFI, low capacitances and a low RDS(ON) temperature coefficient, ideal for on-board chargers and 6.6kW DC/DC modules.
| VDSS | ID | ID | RDS(ON) | PACKAGE |
|---|---|---|---|---|
| 1200V | 36A (Tc=25°C) | 25A (Tc=100°C) | 121mΩ (typ, VGS=20V, ID=20A) | TO247-3L |
Asymmetrical bridge converters; Inverters; Single switch forward/flyback; On board charger; 6.6kW DC/DC module
The QS120C080YL is a 1200V N-channel Silicon Carbide MOSFET in a TO247-3L package, offering fast switching with low EMI/RFI, low capacitances and a low RDS(ON) temperature coefficient, ideal for on-board chargers and 6.6kW DC/DC modules.
| VDSS | ID | ID | RDS(ON) | PACKAGE |
|---|---|---|---|---|
| 1200V | 36A (Tc=25°C) | 25A (Tc=100°C) | 121mΩ (typ, VGS=20V, ID=20A) | TO247-3L |
Asymmetrical bridge converters; Inverters; Single switch forward/flyback; On board charger; 6.6kW DC/DC module
