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QS50SCM330U61 | 61A 3300V 50mΩ SiC MOSFET | TO-247
The QS50SCM330U61 is a 3rd generation 3300V/61A Silicon Carbide MOSFET in a TO247-HS 2L package, offering high blocking voltage with low on-resistance, high-speed switching and a 175°C junction temperature capability for demanding high-voltage traction and power conversion systems.
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3300V
61A
SiC MOSFET
The QS50SCM330U61 is a 3rd generation 3300V/61A Silicon Carbide MOSFET in a TO247-HS 2L package, offering high blocking voltage with low on-resistance, high-speed switching and a 175°C junction temperature capability for demanding high-voltage traction and power conversion systems.
| VDSS | ID | PACKAGE | TJ(MAX) |
|---|---|---|---|
| 3300V | 61A | TO247-HS 2L | 175°C |
The QS50SCM330U61 is a 3rd generation 3300V/61A Silicon Carbide MOSFET in a TO247-HS 2L package, offering high blocking voltage with low on-resistance, high-speed switching and a 175°C junction temperature capability for demanding high-voltage traction and power conversion systems.
| VDSS | ID | PACKAGE | TJ(MAX) |
|---|---|---|---|
| 3300V | 61A | TO247-HS 2L | 175°C |
