QS170C800YL | 7.5A 1700V 800mΩ SiC MOSFET | TO-247

The QS170C800YL is a 1700V N-channel Silicon Carbide (SiC) MOSFET rated for 7.5A continuous drain current with 800mΩ Rds(on) at Vgs=18V. Designed for high-efficiency, high-frequency power conversion in high-voltage industrial drives, traction and energy storage systems, it offers superior switching performance and thermal conductivity versus silicon in a TO-247-3L package. PRELIMINARY.