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QS120C080Y4 | 36A 1200V 80mΩ SiC MOSFET | TO-247
The QS120C080Y4 is a 1200V N-channel Silicon Carbide MOSFET in a fully-insulated TO-247-4L package, delivering fast switching, low capacitance and reduced switching losses for on-board chargers and DC/DC modules.
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1200V
36A
SiC MOSFET
The QS120C080Y4 is a 1200V N-channel Silicon Carbide MOSFET in a fully-insulated TO-247-4L package, delivering fast switching, low capacitance and reduced switching losses for on-board chargers and DC/DC modules.
| VDSS | ID | ID | RDS(ON) | PACKAGE |
|---|---|---|---|---|
| 1200V | 36A (Tc=25°C) | 25A (Tc=100°C) | 121mΩ (typ, VGS=20V, ID=20A) | TO-247-4L |
Asymmetrical bridge converters; Inverters; Single switch forward/flyback converters; PV string inverters; EV charging piles
The QS120C080Y4 is a 1200V N-channel Silicon Carbide MOSFET in a fully-insulated TO-247-4L package, delivering fast switching, low capacitance and reduced switching losses for on-board chargers and DC/DC modules.
| VDSS | ID | ID | RDS(ON) | PACKAGE |
|---|---|---|---|---|
| 1200V | 36A (Tc=25°C) | 25A (Tc=100°C) | 121mΩ (typ, VGS=20V, ID=20A) | TO-247-4L |
Asymmetrical bridge converters; Inverters; Single switch forward/flyback converters; PV string inverters; EV charging piles
