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QS50SCM330X61 | 3300V 61A SiC MOSFET Bare Die, 50mΩ Gen3
The QS50SCM330X61 is a 3300V N-channel Silicon Carbide (SiC) MOSFET rated for 8A continuous drain current with 50mΩ Rds(on) at Vgs=18V. Designed for high-efficiency, high-frequency power conversion in HVDC, rail traction and utility-scale energy storage, it offers superior switching performance and thermal conductivity versus silicon in a TO-247-3L package. PRELIMINARY.
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3300V
61A
SiC MOSFET
N/A
The QS50SCM330X61 is a 3rd Generation Silicon Carbide (SiC) MOSFET bare die rated at 3300V blocking voltage with 50mΩ typical on-resistance. Purpose-built for ultra-high-voltage power conversion, it delivers exceptional switching performance with a fast integrated body diode, Kelvin source contact, and 175°C operating junction temperature.
| Specification | Value |
|---|---|
| Vds | 3300V |
| Id | 61A @ Tc=25°C, 45A @ Tc=100°C |
| Rds(on) typ | 50mΩ (Vgs=18V, Tj=25°C), 65mΩ max |
| Vth typ | 2.8V |
| Tj max | 175°C |
| Fast body diode | trr and Qrr optimised for 3300V operation |
| Specification | Rθ(j-c) < 0.3°C/W |
The QS50SCM330X61 is a 3rd Generation Silicon Carbide (SiC) MOSFET bare die rated at 3300V blocking voltage with 50mΩ typical on-resistance. Purpose-built for ultra-high-voltage power conversion, it delivers exceptional switching performance with a fast integrated body diode, Kelvin source contact, and 175°C operating junction temperature.
| Specification | Value |
|---|---|
| Vds | 3300V |
| Id | 61A @ Tc=25°C, 45A @ Tc=100°C |
| Rds(on) typ | 50mΩ (Vgs=18V, Tj=25°C), 65mΩ max |
| Vth typ | 2.8V |
| Tj max | 175°C |
| Fast body diode | trr and Qrr optimised for 3300V operation |
| Specification | Rθ(j-c) < 0.3°C/W |
