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QSAE120N50 Trench Cluster IGBT 1200V 80A Bare Die
Trench Cluster IGBT 1200V 80A Bare Die
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1200V
80A
IGBT
The QSIG120N50 is  a Trench Cluster IGBT bare die rated at 1200V and 80A. It uses IGBT technology in a Bare Die format, with a typical VCE(sat) of 1.4V and Eoff of 3.6mJ. Pin-to-pin reference: Infineon SIGC100T120R8RM / Mitsubishi CM100E3Y-12H (die level).
The QSIG120N50 is  a Trench Cluster IGBT bare die rated at 1200V and 80A. It uses IGBT technology in a Bare Die format, with a typical VCE(sat) of 1.4V and Eoff of 3.6mJ. Pin-to-pin reference: Infineon SIGC100T120R8RM / Mitsubishi CM100E3Y-12H (die level).
