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QSD-HCS002X1000
QSDHCS002X1000 – 10000V 2A SiC Schottky Diode Bare Die
$50.000
MOQ: 1
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10000V
2A
SiC Schottky Diode
SiC Schottky Diode
The QSDHCS002X1000 is a 10000V, 2A SiC Schottky Diode supplied in Bare Die form. It features a forward voltage of 1.5V, reverse current of 18µA, and total capacitive charge of . Market cross-reference: . AEC-Q101 qualified: No.
| VRRM | IF(AVE) | IFSM | IFRM | VF | IR | QC | MARKET CROSS-REF | AEC-Q101 |
|---|---|---|---|---|---|---|---|---|
| 10000V | 2A | 1.5V | 18µA | No |
Medical imaging systems (X-ray, CT, MRI) | Scientific instrumentation | Radar and defence systems | High-voltage power supplies | Particle accelerators | Semiconductor manufacturing equipment | Capacitor charging systems
The QSDHCS002X1000 is a 10000V, 2A SiC Schottky Diode supplied in Bare Die form. It features a forward voltage of 1.5V, reverse current of 18µA, and total capacitive charge of . Market cross-reference: . AEC-Q101 qualified: No.
| VRRM | IF(AVE) | IFSM | IFRM | VF | IR | QC | MARKET CROSS-REF | AEC-Q101 |
|---|---|---|---|---|---|---|---|---|
| 10000V | 2A | 1.5V | 18µA | No |
Medical imaging systems (X-ray, CT, MRI) | Scientific instrumentation | Radar and defence systems | High-voltage power supplies | Particle accelerators | Semiconductor manufacturing equipment | Capacitor charging systems
