QSJJ48N170 | 48A 1700V 80mΩ SiC MOSFET | TO-247

The QSJJ48N170 is a 1700V N-channel Silicon Carbide (SiC) MOSFET rated for 48A continuous drain current with 80mΩ Rds(on) at Vgs=18V. Designed for high-efficiency, high-frequency power conversion in high-voltage industrial drives, traction and energy storage systems, it offers superior switching performance and thermal conductivity versus silicon in a TO-247-3L package. PRELIMINARY.