QSJW065R26 | 99A 650V 26mΩ SiC MOSFET | TO-247 - Image 1
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QSJW065R26 | 99A 650V 26mΩ SiC MOSFET | TO-247

The QSJW065R26 is a 650V N-channel Silicon Carbide (SiC) MOSFET rated for 99A continuous drain current with 26mΩ Rds(on) at Vgs=18V. Designed for high-efficiency, high-frequency power conversion in EV onboard chargers, solar inverters and industrial motor drives, it offers superior switching performance and thermal conductivity versus silicon in a TO-247-3L package. PRELIMINARY.

$13.834

Quantity
Unit Price
1 Piece
$13.834
10 Pieces
$13.065
50 Pieces
$12.681
100 Pieces
$12.296
500+ Pieces
$11.528
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650

99A

SiC MOSFET

The QSJW065R26 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L leaded package with an industry-leading 26mΩ typical RDS(ON), high blocking voltage and high-speed switching with low EMI/RFI for renewable energy and on-board charger applications.

VDSS ID ID RDS(ON)
650V 99A (VGS=18V, Tc=25°C) 70A (Tc=100°C) 26mΩ (typ)/38mΩ (max) at VGS=18V, ID=40A
Renewable energy; Switch mode power supplies (SMPS); On board charger; High-voltage DC/DC converters

The QSJW065R26 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L leaded package with an industry-leading 26mΩ typical RDS(ON), high blocking voltage and high-speed switching with low EMI/RFI for renewable energy and on-board charger applications.

VDSS ID ID RDS(ON)
650V 99A (VGS=18V, Tc=25°C) 70A (Tc=100°C) 26mΩ (typ)/38mΩ (max) at VGS=18V, ID=40A
Renewable energy; Switch mode power supplies (SMPS); On board charger; High-voltage DC/DC converters