QSJW065R36 | 70A 650V 36mΩ SiC MOSFET | TO-247 - Image 1
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QSJW065R36 | 70A 650V 36mΩ SiC MOSFET | TO-247

The QSJW065R36 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L package with 36mΩ typical RDS(ON), high-speed switching and robust thermal performance for renewable energy and high-voltage DC/DC converter designs.

$12.849

Quantity
Unit Price
1 Piece
$12.849
10 Pieces
$12.135
50 Pieces
$11.778
100 Pieces
$11.421
500+ Pieces
$10.708
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650

70A

SiC MOSFET

The QSJW065R36 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L package with 36mΩ typical RDS(ON), high-speed switching and robust thermal performance for renewable energy and high-voltage DC/DC converter designs.

VDSS ID ID RDS(ON)
650V 70A (VGS=18V, Tc=25°C) 49A (Tc=100°C) 36mΩ (typ)/44mΩ (max) at VGS=18V, ID=20A
Renewable energy; Switch mode power supplies (SMPS); On board charger; High-voltage DC/DC converters

The QSJW065R36 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L package with 36mΩ typical RDS(ON), high-speed switching and robust thermal performance for renewable energy and high-voltage DC/DC converter designs.

VDSS ID ID RDS(ON)
650V 70A (VGS=18V, Tc=25°C) 49A (Tc=100°C) 36mΩ (typ)/44mΩ (max) at VGS=18V, ID=20A
Renewable energy; Switch mode power supplies (SMPS); On board charger; High-voltage DC/DC converters