QSJW065R95 | 38A 650V 95mΩ SiC MOSFET | TO-247 - Image 1
Click to enlarge

IN STOCK

QSJW065R95 | 38A 650V 95mΩ SiC MOSFET | TO-247

The QSJW065R95 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L package with 95mΩ typical RDS(ON), high blocking voltage and high-speed switching with low EMI/RFI for on-board chargers and DC/DC converters.

$6.501

Quantity
Unit Price
1 Piece
$6.501
10 Pieces
$6.930
50 Pieces
$6.115
100 Pieces
$5.544
500+ Pieces
$4.892
REQUEST A SAMPLE
MOQ: 1
  • Ships in 1-2 Business days
  • Worldwide delivery available

650

38A

SiC MOSFET

The QSJW065R95 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L package with 95mΩ typical RDS(ON), high blocking voltage and high-speed switching with low EMI/RFI for on-board chargers and DC/DC converters.

VDSS ID ID RDS(ON)
650V 38A (VGS=18V, Tc=25°C) 27A (Tc=100°C) 95mΩ (typ)/125mΩ (max) at VGS=18V, ID=10A
Renewable energy; Switch mode power supplies (SMPS); On board charger; High-voltage DC/DC converters

The QSJW065R95 is a 650V N-channel Silicon Carbide MOSFET in a TO-247-3L package with 95mΩ typical RDS(ON), high blocking voltage and high-speed switching with low EMI/RFI for on-board chargers and DC/DC converters.

VDSS ID ID RDS(ON)
650V 38A (VGS=18V, Tc=25°C) 27A (Tc=100°C) 95mΩ (typ)/125mΩ (max) at VGS=18V, ID=10A
Renewable energy; Switch mode power supplies (SMPS); On board charger; High-voltage DC/DC converters