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QSYP003R1P9 | 178A 30V Si MOSFET | TO-220
The QSYP003R1P9 is a 30V N-channel Power MOSFET in a TO-220 package with very low RDS(ON) across all conditions, a fast recovery body diode and new trench technology, designed for PWM, power management and synchronous rectification applications.
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30
178A
Si MOSFET
The QSYP003R1P9 is a 30V N-channel Power MOSFET in a TO-220 package with very low RDS(ON) across all conditions, a fast recovery body diode and new trench technology, designed for PWM, power management and synchronous rectification applications.
| VDSS | ID | RDS(ON) | RDS(ON) |
|---|---|---|---|
| 30V | 178A | 2.8mΩ (max, VGS=10V, ID=80A) | 4.5mΩ (max, VGS=4.5V, ID=80A) |
PWM applications; Power management; Synchronous rectification
The QSYP003R1P9 is a 30V N-channel Power MOSFET in a TO-220 package with very low RDS(ON) across all conditions, a fast recovery body diode and new trench technology, designed for PWM, power management and synchronous rectification applications.
| VDSS | ID | RDS(ON) | RDS(ON) |
|---|---|---|---|
| 30V | 178A | 2.8mΩ (max, VGS=10V, ID=80A) | 4.5mΩ (max, VGS=4.5V, ID=80A) |
PWM applications; Power management; Synchronous rectification
