high voltage silicon carbide schottky diodes

650V TO 10KV | 4A TO 200A

Single-die and packaged SiC schottky barrier diodes for mission critical power systems.

industry leading technology

Ultra-low losses, high efficiency

high temperature operation

Reliable upto 175'C junction temperature

high power density

Smaller, lighter and more efficient systems

extreme power reliability

Built for demanding applications

global shipping

Fast, reliable and worldwide delivery

FEATURED PRODUCTS

QS100N08 | 100A 80V 6.5mΩ N-Ch Si MOSFET | TO-220C

$3.376
100A 80V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS120C040Y4 | 66.0A 1200V 40mΩ SiC MOSFET | TO-247-4L

$10.334
66.0A 1200V SiC MOSFET in TO-247-4L package. Rds(on): 40mΩVGS = 20V.

QS120C040YL | 66A 1200V 40mΩ SiC MOSFET | TO-3P

$10.334
The QS120C040YL is a 1200V N-channel Silicon Carbide MOSFET housed in a TO-3P plastic package, providing fast switching, low EMI/RFI and a low RDS(ON) temperature coefficient for improved system efficiency in high voltage power conversion.

QS120C080Y4 | 36A 1200V 80mΩ SiC MOSFET | TO-247

$5.374
The QS120C080Y4 is a 1200V N-channel Silicon Carbide MOSFET in a fully-insulated TO-247-4L package, delivering fast switching, low capacitance and reduced switching losses for on-board chargers and DC/DC modules.

QS120C080YL | 36A 1200V 80mΩ SiC MOSFET | TO247-3L

$18.360
The QS120C080YL is a 1200V N-channel Silicon Carbide MOSFET in a TO-3P package, offering fast switching with low EMI/RFI, low capacitances and a low RDS(ON) temperature coefficient, ideal for on-board chargers and 6.6kW DC/DC modules.

QS150N03 | 150A 30V 2.5mΩ N-Ch Si MOSFET | TO-220C

$2.247
The QS150N03 is a 30V N-channel silicon MOSFET rated for 150A continuous current with an ultra-low 2.5mΩ Rds(on), delivering exceptional efficiency in high-current power switching applications. Housed in a robust TO-220C package, it is optimised for industrial power designs, DC-DC converters, motor drives, and battery management systems where low conduction losses are critical.

QS170C800YL | 7.5A 1700V 800mΩ SiC MOSFET | TO-247

$6.808
The QS170C800YL is a 1700V N-channel Silicon Carbide (SiC) MOSFET rated for 7.5A continuous drain current with 800mΩ Rds(on) at Vgs=18V. Designed for high-efficiency, high-frequency power conversion in high-voltage industrial drives, traction and energy storage systems, it offers superior switching performance and thermal conductivity versus silicon in a TO-247-3L package. PRELIMINARY.

QS180N10 | 180A 100V 3.5mΩ N-Ch Si MOSFET | TO-220C

$4.371
180A 100V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS33N10 | 33A 100V 25mΩ N-Ch Si MOSFET | TO-220C

$2.041
The QS33N10 is a 100V N-channel silicon MOSFET rated for 33A continuous current with 25mΩ Rds(on), optimised for efficient power switching. Housed in a TO-220C package, it delivers low conduction losses for industrial power supplies, motor controllers and UPS systems.

QS45SCM200X62| 2000V 62A SiC MOSFET Bare Die, 45mΩ Gen2

$88.200
QS2Q200045BD – 2000V 62A SiC MOSFET Bare Die, 45mΩ Gen2

QS50N06 | 50A 60V 12mΩ N-Ch Si MOSFET | TO-220C

$1.865
50A 60V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS50SCM330U61 | 61A 3300V 50mΩ SiC MOSFET | TO-247

$97.059
The QS50SCM330U61 is a 3rd generation 3300V/61A Silicon Carbide MOSFET in a TO247-HS 2L package, offering high blocking voltage with low on-resistance, high-speed switching and a 175°C junction temperature capability for demanding high-voltage traction and power conversion systems.

QS100N08 | 100A 80V 6.5mΩ N-Ch Si MOSFET | TO-220C

$3.376
100A 80V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS120C040Y4 | 66.0A 1200V 40mΩ SiC MOSFET | TO-247-4L

$10.334
66.0A 1200V SiC MOSFET in TO-247-4L package. Rds(on): 40mΩVGS = 20V.

QS120C040YL | 66A 1200V 40mΩ SiC MOSFET | TO-3P

$10.334
The QS120C040YL is a 1200V N-channel Silicon Carbide MOSFET housed in a TO-3P plastic package, providing fast switching, low EMI/RFI and a low RDS(ON) temperature coefficient for improved system efficiency in high voltage power conversion.

QS120C080Y4 | 36A 1200V 80mΩ SiC MOSFET | TO-247

$5.374
The QS120C080Y4 is a 1200V N-channel Silicon Carbide MOSFET in a fully-insulated TO-247-4L package, delivering fast switching, low capacitance and reduced switching losses for on-board chargers and DC/DC modules.

QS120C080YL | 36A 1200V 80mΩ SiC MOSFET | TO247-3L

$18.360
The QS120C080YL is a 1200V N-channel Silicon Carbide MOSFET in a TO-3P package, offering fast switching with low EMI/RFI, low capacitances and a low RDS(ON) temperature coefficient, ideal for on-board chargers and 6.6kW DC/DC modules.

QS150N03 | 150A 30V 2.5mΩ N-Ch Si MOSFET | TO-220C

$2.247
The QS150N03 is a 30V N-channel silicon MOSFET rated for 150A continuous current with an ultra-low 2.5mΩ Rds(on), delivering exceptional efficiency in high-current power switching applications. Housed in a robust TO-220C package, it is optimised for industrial power designs, DC-DC converters, motor drives, and battery management systems where low conduction losses are critical.

QS170C800YL | 7.5A 1700V 800mΩ SiC MOSFET | TO-247

$6.808
The QS170C800YL is a 1700V N-channel Silicon Carbide (SiC) MOSFET rated for 7.5A continuous drain current with 800mΩ Rds(on) at Vgs=18V. Designed for high-efficiency, high-frequency power conversion in high-voltage industrial drives, traction and energy storage systems, it offers superior switching performance and thermal conductivity versus silicon in a TO-247-3L package. PRELIMINARY.

QS180N10 | 180A 100V 3.5mΩ N-Ch Si MOSFET | TO-220C

$4.371
180A 100V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS33N10 | 33A 100V 25mΩ N-Ch Si MOSFET | TO-220C

$2.041
The QS33N10 is a 100V N-channel silicon MOSFET rated for 33A continuous current with 25mΩ Rds(on), optimised for efficient power switching. Housed in a TO-220C package, it delivers low conduction losses for industrial power supplies, motor controllers and UPS systems.

QS45SCM200X62| 2000V 62A SiC MOSFET Bare Die, 45mΩ Gen2

$88.200
QS2Q200045BD – 2000V 62A SiC MOSFET Bare Die, 45mΩ Gen2

QS50N06 | 50A 60V 12mΩ N-Ch Si MOSFET | TO-220C

$1.865
50A 60V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS50SCM330U61 | 61A 3300V 50mΩ SiC MOSFET | TO-247

$97.059
The QS50SCM330U61 is a 3rd generation 3300V/61A Silicon Carbide MOSFET in a TO247-HS 2L package, offering high blocking voltage with low on-resistance, high-speed switching and a 175°C junction temperature capability for demanding high-voltage traction and power conversion systems.

QS100N08 | 100A 80V 6.5mΩ N-Ch Si MOSFET | TO-220C

$3.376
100A 80V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS120C040Y4 | 66.0A 1200V 40mΩ SiC MOSFET | TO-247-4L

$10.334
66.0A 1200V SiC MOSFET in TO-247-4L package. Rds(on): 40mΩVGS = 20V.

QS120C040YL | 66A 1200V 40mΩ SiC MOSFET | TO-3P

$10.334
The QS120C040YL is a 1200V N-channel Silicon Carbide MOSFET housed in a TO-3P plastic package, providing fast switching, low EMI/RFI and a low RDS(ON) temperature coefficient for improved system efficiency in high voltage power conversion.

QS120C080Y4 | 36A 1200V 80mΩ SiC MOSFET | TO-247

$5.374
The QS120C080Y4 is a 1200V N-channel Silicon Carbide MOSFET in a fully-insulated TO-247-4L package, delivering fast switching, low capacitance and reduced switching losses for on-board chargers and DC/DC modules.

QS120C080YL | 36A 1200V 80mΩ SiC MOSFET | TO247-3L

$18.360
The QS120C080YL is a 1200V N-channel Silicon Carbide MOSFET in a TO-3P package, offering fast switching with low EMI/RFI, low capacitances and a low RDS(ON) temperature coefficient, ideal for on-board chargers and 6.6kW DC/DC modules.

QS150N03 | 150A 30V 2.5mΩ N-Ch Si MOSFET | TO-220C

$2.247
The QS150N03 is a 30V N-channel silicon MOSFET rated for 150A continuous current with an ultra-low 2.5mΩ Rds(on), delivering exceptional efficiency in high-current power switching applications. Housed in a robust TO-220C package, it is optimised for industrial power designs, DC-DC converters, motor drives, and battery management systems where low conduction losses are critical.

QS170C800YL | 7.5A 1700V 800mΩ SiC MOSFET | TO-247

$6.808
The QS170C800YL is a 1700V N-channel Silicon Carbide (SiC) MOSFET rated for 7.5A continuous drain current with 800mΩ Rds(on) at Vgs=18V. Designed for high-efficiency, high-frequency power conversion in high-voltage industrial drives, traction and energy storage systems, it offers superior switching performance and thermal conductivity versus silicon in a TO-247-3L package. PRELIMINARY.

QS180N10 | 180A 100V 3.5mΩ N-Ch Si MOSFET | TO-220C

$4.371
180A 100V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS33N10 | 33A 100V 25mΩ N-Ch Si MOSFET | TO-220C

$2.041
The QS33N10 is a 100V N-channel silicon MOSFET rated for 33A continuous current with 25mΩ Rds(on), optimised for efficient power switching. Housed in a TO-220C package, it delivers low conduction losses for industrial power supplies, motor controllers and UPS systems.

QS45SCM200X62| 2000V 62A SiC MOSFET Bare Die, 45mΩ Gen2

$88.200
QS2Q200045BD – 2000V 62A SiC MOSFET Bare Die, 45mΩ Gen2

QS50N06 | 50A 60V 12mΩ N-Ch Si MOSFET | TO-220C

$1.865
50A 60V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QS50SCM330U61 | 61A 3300V 50mΩ SiC MOSFET | TO-247

$97.059
The QS50SCM330U61 is a 3rd generation 3300V/61A Silicon Carbide MOSFET in a TO247-HS 2L package, offering high blocking voltage with low on-resistance, high-speed switching and a 175°C junction temperature capability for demanding high-voltage traction and power conversion systems.

MARKETS WE SERVE

AI & DATA CENTERS

High efficiency power conversion

AI & DATA CENTERS

• Server power supplies
• DC-DC converters
• UPS systems
• Power distribution.
VIEW SOLUTIONS

ELECTRIC VEHICLES

Onboard chargers and traction

ELECTRIC VEHICLES

• Onboard chargers
• Traction inverters
• DC-DC converters
• Auxiliary power supplies
VIEW SOLUTIONS

RENEWABLE ENERGY

Solar and wind power systems

RENEWABLE ENERGY

• Inverters
• DC-DC converters
• Energy storage systems
• Power conditioning
VIEW SOLUTIONS

INDUSTRIAL POWER

Motor drives and automation

INDUSTRIAL POWER

• Motor drives
• Industrial inverters
• Welding equipment
• SMPS & power supplies
VIEW SOLUTIONS

ENERGY STORAGE

Reliable Battery storage systems

ENERGY STORAGE

• BMS systems
• DC-DC converters
• Bidirectional inverters
• Power management
VIEW SOLUTIONS

AEROSPACE & DEFENCE

Mission critical systems

AEROSPACE & DEFENCE

• Radar systems
• Power conditioning
• DC power systems
• Avionics power
VIEW SOLUTIONS

WHY CHOOSE QUEST SiC

Lower Switching Losses

Ultra low conduction and switching losses

Temperature Operation

Reliable upto 175'C junction temperature

Increased Power Density

Smaller, lighter and more efficient systems

High Reliability

Built for demanding applications

Global Support

Fast delivery and engineering support

TECHNICAL RESOURCES

Technical documents to accelerate your innovation with Quest Sic.

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