SiC Homogeneous Schottky Barrier Diodes

SiC SBDs are small semi-conductor devices or one-way switches that are widely used in power conversion systems that rely heavily on the characteristics of silicon carbide – in that it is highly thermally conductive, has an extremely low coefficient for thermal expansion and is also highly resistant to thermal shock. In general, silicon carbide SBDs are considered to be significantly more efficient than standard diodes, being able to operate at high current density with a low forward voltage drop that result in less wasted energy.


The downside of silicon carbide diodes is that the production process has traditionally been complicated and relatively costly but through the research collaboration that Quest have established with QMF, new patented processes are now available that dramatically speed up and reduce the cost of the process. Incorporating production steps that are standard procedure in the manufacture of SiC wafers has revolutionized the design of these components and also allows customer specifications in regard to forward voltage and current rating to be facilitated in a timely and cost-effective manner. Low fabrication time and reduced costs all results in lower prices for the customers and the product will be in high demand particularly in the production of solar inverters, motor drives, electric car chargers and other users of uninterruptable power supplies.


Queensland Semiconductor Technologies (Quest) have rapidly established themselves at the very forefront of pioneering new technologies in the production of all kinds of semiconductors which are themselves integral to groundbreaking developments in many industries, no less so than in aerospace and military applications.


Through continuing collaborative research and development, in particular with Griffith University of Queensland, Quest have developed a new patented manufacturing process for the mass production of SiC Schottky barrier diodes, that due to the reduction in power required for ion implantation results in favourable production costs, which enables Quest to compete with already established semiconductor manufacturers around the globe, and has also helped to establish Australia as a recognised centre of excellence in the industry.


Maintaining pace with the ever-changing technological landscape requires commitment, dedication and innovation, qualities that are at the heart of the Quest operation where excellence is considered standard and the faultless performance of their semiconductors is matched with longevity.


With the capability to produce not just homogenous SiC Schottky barrier diodes but SiC wafers, IGBT, CIGBT and SiC Mosfets, Quest is on course to become a dominant global distributer of a diverse range semiconductors that will be a significant part of future advances in technology in renewable energy and electric powered vehicles.


In recent years there have been unprecedented advances in many aspects of technological innovation, and there is little to suggest that this rate of progress will be slowed at any time soon and Quest will strive to be at the cutting edge of semiconductor development.


The evolution of the semiconductor over the last few decades has given rise to astonishing developments in the world of electronics, where everyday items used on a global scale are now smaller, faster and infinitely more reliable than ever before.


Semiconductors are a critical component of most modern electronic technologies and as such have become an important part of our lives. However, at the cutting edge of the semiconductor industry is the SiC Wafer which is widely utilised in power diodes, Mosfet’s, and similar devices where efficient energy conversion and management is essential. And leading the way in the development and manufacture of SiC Wafers is Quest Semiconductors, an innovative and forward-looking company, that in collaboration with research and education facilities have fine-tuned the production of SiC wafers into a highly efficient and cost-effective operation.


Of course, you don’t become one of the leading SiC Schottky diode manufacturers overnight; the road to success has been paved with painstaking research, enlisting highly skilled workers and not least of all, finding suitable premises for the complicated and intricate processes of creating diodes, wafers and more. Quest have demonstrated their commitment to this cause and are increasingly influential within the industry with their products in high demand in modern, transformative industries such as electric powered vehicles, aerospace and renewable energy production. The semiconductor industry boasts some of the most high-tech research and development seen today, and in Australia, Quest are leading the way in ground breaking SiC wafer technology.


The first commercial SiC Schottky barrier diodes were first launched about ten years ago when they were mainly utilised in power supply systems but in the years since, with the boundaries and limitations of SiC Schottky diodes constantly being tested, their place in the forward drive of new technologies has been cemented.


Today, silicon carbide diodes are widely used in a range of applications that require high temperature and high voltage operation, low power losses, fast switching speeds and high efficiency and in particular aerospace and defence, power electronics and electric vehicle chargers all benefit from certain advantages brough by the use of SiC diodes. Reductions in the size and weight of systems is matched by increases in overall performance and reliability, increases in power density and efficiency, also aligned with lower running costs. And in the realm of consumer electronics, improved battery life and shorter charging times are tangible advances from which we all benefit on a daily basis whilst using our mobile phones, laptops and similar appliances.


However, one accepted disadvantage of the Sic Schottky diode has the production cost, which exceeds that of the older silicon diode, but here at Quest, our tireless research has unearthed new production techniques namely the Homogeneous non ion implantation method that reduces the price of SiC diodes massively. Our state of the art facility and commitment to break new ground in the world of the semi-conductor has helped us become one of the leading SiC Schottky diode manufacturers, working with and supplying partners across in the Australian and global markets.