High Voltage Silicon Carbide Diodes | Quest Semi

Quest Semiconductor - Advanced SiC Schottky Diodes
Revolutionary High Voltage SiC Technology

Pioneering the future of power electronics with breakthrough Silicon Carbide Schottky diodes

3300V 5000V 10000V

Discover Our Innovation

Next-Generation SiC Schottky Diodes

Engineered for extreme voltage applications with unmatched efficiency and reliability

3300V

Medium Voltage Series

Temperature independent fast switching
Low reverse leakage current
Low Vf at high temperatures
5000V

High Voltage Series

Easy paralleling (positive temperature coefficient of Vf)
High repetitive surge current
High surge current
10kV

Ultra High Voltage Series

Low chip temperature
No lon implantation
75% less power for manufacturing

WHY CHOOSE QUEST HIGH VOLTAGE SBD?

.Essentially no switching losses
.Higher efficiency
.Switching Time
.Reduction of heat sink requirements

Ready to Power the Future?

Contact our team to discuss how Quest Semiconductor's SiC technology can transform your applications