The role of the silicon carbide Schottky diode in many high-tech industries is undisputed, being an essential component in many power modules looking to maximise power efficiency, but in many aspects bare die silicon carbide Schottky diodes provide even greater functionality.

Bare die Schottky barrier diodes are simply unencapsulated (unpackaged) individual semi-conductor chips cut directly from a silicon wafer that contain only the necessary functional circuitry, and being of a smaller size and lighter than encapsulated chips are often mounted directly to circuits where environmental constraints of size and weight carry great importance, for example in medical implants and aerospace technologies. The reduction in size of the bare die Schottky silicon carbide semi-conductor facilitates greater flexibility when it comes to the design of your circuits, results in no compromise to power or functionality and is often accompanied by greater thermal properties and performance. Common applications for bare die diodes include on board chargers, DC DC converters, traction inverters, Power Factor Correction circuits, industrial motor drives and solar inverters. Space is also an issue and using for example a 10kv Schottky diode means having not to use multiple 2kv or 3kv diodes from other manufacturers.

Here at Quest, we are at the forefront of developing high current and high voltage bare die diodes, seeking not only enhanced performance from each diode but also developing production processes that ensure the affordability and reliability of these, almost omnipotent components. At present we manufacture SiC Schottky barrier diodes capable of performing at 10,000 V and at 5A, opening up new thresholds of performance and efficiency.

Contact us today to learn more about how we can collaborate with you and your need for semiconductor die.