SiC Schottky Diode Bare Die
| Specification | Type | Vrrm | If(ave) | Ifsm (tp=10ms) | Ifrm (tp=10ms) | Vf (Tj=25°C) | Ir (Tj =25°C) | Qc | Market Cross-Ref | Package | Datasheet | AEC-Q101 | Downloads |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| | | V | A | A | | V | µA | nC | | | | | |
| QSD-HCS002X065 | SiC Schottky Diode | 650 | 2 | 12 | 11 | 1.4 | 1 | 7.2 | Wolfspeed 650V die (C3/C4 platform) |
|
| no |
|
| QSD-HCS004X65 | SiC Schottky Diode | 650 | 4 | 4 | 28 | 1.40 | 1 | 14 | ROHM SCS2xx die (custom supply) |
|
| no |
|
| QSD-HCS006X65 | SiC Schottky Diode | 650 | 6 | 42 | 32 | 1.4 | 1 | 30 | STMicroelectronics STPSC die (internal/module) |
|
| no |
|
| QSD-HCS008X65 | SiC Schottky Diode | 650 | 8 | 56 | 44 | 1.40 | 1 | 37 | onsemi SiC diode die (module program) |
|
| no |
|
| QSD-HCS010X65 | SiC Schottky Diode | 650 | 10 | 70 | 56 | 1.4 | 1 | 51 | Wolfspeed high-current die (module customers) |
|
| no |
|
| QSD-HCS016X65 | SiC Schottky Diode | 650 | 16 | 104 | 83 | 1.40 | 2 | 74 | Infineon CoolSiC™ die (internal use) |
|
| no |
|
| QSD-HCS020X65 | SiC Schottky Diode | 650 | 20 | 130 | 104 | 1.40 | 2 | 90 | Wolfspeed C4D die platform (sold to module makers) |
|
| no |
|
| QSD-HCS030X65 | SiC Schottky Diode | 650 | 30 | 180 | 144 | 1.5 | 3 | 140 | ROHM 1200V die (SCS series internal supply) |
|
| no |
|
| QSD-HCS040X65 | SiC Schottky Diode | 650 | 40 | 240 | 192 | 1.5 | 5 | 170 | STMicroelectronics 1200V SiC die |
|
| no |
|
| QSD-HCS050X65 | SiC Schottky Diode | 650 | 50 | 300 | 192 | 1.5 | 10 | 225 | onsemi EliteSiC diode die |
|
| no |
|
| QSD-HCS080X65 | SiC Schottky Diode | 650 | 80 | 400 | 260 | 1.5 | 10 | 360 | Wolfspeed module-grade die supply |
|
| no |
|
| QSD-HCS100X65 | SiC Schottky Diode | 650 | 100 | 500 | 350 | 1.6 | 25 | 439 | Infineon CoolSiC die (primarily captive) |
|
| no |
|
| QSD-HCS200X75 | SiC Schottky Diode | 750 | 200 | | | | | | Wolfspeed 1700V die (limited availability) |
|
| no |
|
| QSD-HCS008X90 | SiC Schottky Diode | 900 | 8 | | | | | 33 | ROHM 1700V die (mostly captive) |
|
| no |
|
| QSD-HCS002X120 | SiC Schottky Diode | 1200 | 2 | 16 | 12 | 1.40 | 1 | 12 | Wolfspeed C4D die platform (sold to module makers) |
|
| no |
|
| QSD-HCS004X120 | SiC Schottky Diode | 1200 | 4 | 28 | 24 | 1.40 | 1 | 24 | ROHM 1200V die (SCS series internal supply) |
|
| no |
|
| QSD-HCS006X120 | SiC Schottky Diode | 1200 | 6 | 45 | 39 | 1.4 | 1 | 31 | STMicroelectronics 1200V SiC die |
|
| no |
|
| QSD-HCS010X120 | SiC Schottky Diode | 1200 | 10 | 90 | 62 | 1.40 | 3 | 51 | onsemi EliteSiC diode die |
|
| no |
|
| QSD-HCS016X120 | SiC Schottky Diode | 1200 | 16 | 112 | 93 | 1.40 | 3 | 82 | Wolfspeed module-grade die supply |
|
| no |
|
| QSD-HCS020X120 | SiC Schottky Diode | 1200 | 20 | 140 | 119 | 1.40 | 10 | 107 | Wolfspeed module-grade die supply |
|
| no |
|
| QSD-HCS030X120 | SiC Schottky Diode | 1200 | 30 | 190 | 135 | 1.5 | 15 | 154 | Infineon CoolSiC die (primarily captive) |
|
| no |
|
| QSD-HCS040X120 | SiC Schottky Diode | 1200 | 40 | 240 | 168 | 1.5 | 20 | 194 | Wolfspeed 1700V die (limited availability) |
|
| no |
|
| QSD-HCS050X120 | SiC Schottky Diode | 1200 | 50 | 300 | | 1.5 | 10 | 246 | ROHM 1700V die (mostly captive) |
|
| no |
|
| QSD-HCS100X120 | SiC Schottky Diode | 1200 | 100 | 500 | | 1.6 | 30 | 505 | ⚠ Very limited global supply |
|
| no |
|
| QSD-HCS010X170 | SiC Schottky Diode | 1700 | 10 | 65 | | 1.4 | 5 | 121 | ⚠ Primarily module-level only (Infineon/ST) |
|
| no |
|
| QSD-HCS015X170 | SiC Schottky Diode | 1700 | 15 | 97 | | 1.5 | 10 | 182 | na |
|
| no |
|
| QSD-HCS025X170 | SiC Schottky Diode | 1700 | 25 | 150 | | 1.5 | 18 | 286 | na |
|
| no |
|
| QSD-HCS030X170 | SiC Schottky Diode | 1700 | 30 | 180 | | 1.5 | 25 | 253 | Wolfspeed parallel die arrays |
|
| no |
|
| QSD-HCS50X170 | SiC Schottky Diode | 1700 | 50 | 300 | | 1.5 | 15 | 553 | onsemi module die stacks |
|
| no |
|
| QSD-HCS100X170 | SiC Schottky Diode | 1700 | 100 | 500 | | 1.6 | 35 | 1068 | Infineon CoolSiC module die |
|
| no |
|
| QSD-HCS015X220 | SiC Schottky Diode | 2200 | 15 | 90 | | 1.5 | 15 | 312 | Wolfspeed high current die supply |
|
| no |
|
| QSD-HCS50X220 | SiC Schottky Diode | 2200 | 50 | 300 | | 1.5 | 20 | 872 | ⚠ Mostly captive (Infineon/ST) |
|
| no |
|
| QSD-HCS100X220 | SiC Schottky Diode | 2200 | 100 | 500 | | 1.6 | 40 | 1674 | na |
|
| no |
|
| QSD-HCS010X330 | SiC Schottky Diode | 3300 | 10 | 65 | | 1.5 | 15 | 347 | |
|
| no |
|
| QSD-HCS050X330 | SiC Schottky Diode | 3300 | 50 | 300 | | 1.5 | 25 | 1276 | |
|
| no |
|
| QSD-HCS100X330 | SiC Schottky Diode | 3300 | 100 | 500 | | 1.6 | 45 | 2360 | |
|
| no |
|
| QSD-HCS010X500 | SiC Schottky Diode | 5000 | 10 | 75 | 60 | 1.4 | 30 | 365 | |
|
| no |
|
| QSDHCS002X1000 | SiC Schottky Diode | 10000 | 2 | | | 1.5 | 18 | | |
|
| no |
|
| QSDHCS005X1000 | SiC Schottky Diode | 10000 | 5 | | | 1.5 | 18 | | |
|
| no |
|
Bare Die
1. SiC Wafers & Substrates
The foundation for all Quest SiC power devices, available for both standard and high-voltage epitaxial growth.
● Substrates: 4H-SiC N-type wafers 6“Epitaxial Wafers: Custom epi-layers tailored for SBDs and MOSFETs up to 10kV.
- Substrates: 4H-SiC N-type wafers 6″Epitaxial Wafers: Custom epi-layers
tailored for SBDs and MOSFETs up to 10kV.
2. SiC Schottky Barrier Diodes (SBDs)
Quest specializes in Homogeneous SBDs known for near-zero reverse recovery and extreme high-voltage ratings.
● Medium Voltage Series: 650V, 1200V, 1700V, and 3300V.
● ALL SINGLE DIE : No stacking from 2amps to 200amps
● High Voltage Series: 5000V (5kV) 10A modules for industrial and defense.
● Ultra High Voltage Series: 10kV 5A modules—mission-critical for grids and directed energy.
● No ION implantation , unlike MPS method of fabrication we don’t use Ion implantation hence using as much as 75% less electricity when fabricating our die.
● Format Options:
○ Packaged Devices: (TO-247, TO-220, and custom modules).
○ Bare Die: Precision-diced for power module integration.
3. Specialized SiC Components
Emerging technologies and niche power devices for experimental and high-efficiency systems.
Technical White Paper: Thermal Superiority of 5kV SiC Schottky Diodes
Optimizing High-Frequency Power Systems with Silicon Carbide Technology
Executive Summary
Modern high-frequency power applications, such as SMPS, motor drives, and pulsed-power defense systems, are increasingly limited by the thermal bottlenecks of traditional silicon (Si) bipolar rectifiers (p. 1). The QSD-HCS010X500 Silicon Carbide (SiC) Schottky Diode represents a generational leap in performance, offering 5000V repetitive peak reverse voltage with a thermal profile engineered for extreme denity and efficiency.
1. Thermal Dissipation & Package Efficiency
The QSD-HCS010X500 is designed with a massive 833W power dissipation capability
● Low Thermal Resistance: With an industry-leading junction-to-case thermal resistance of 0.18 °C/W, the device ensures rapid heat transfer from the SiC die to the external cooling infrastructure (p. 2).
● Reduction of Heatsink Footprint: Because SiC can operate efficiently at higher
temperatures (up to operating junction temperature), engineers can significantly reduce the size and weight of passive cooling components (pp. 1-2).
● Thermal Stability: Unlike bipolar rectifiers, these unipolar devices can be paralleled without the risk of thermal runaway, as their
2. High-Frequency Advantages
The core of the QSD-HCS010X500’s efficiency in high-frequency environments lies in
its zero reverse recovery current (p. 1).
● Eliminating Switching Losses: By removing the stored charge typically found
in bipolar diodes, switching losses are essentially eliminated, allowing for
significantly higher operating frequencies without proportional heat generation (p.
1).
● Capacitance Profile: At high voltages the total capacitance drops to a mere 98 pF, facilitating the extremely fast switching required for advanced Power Factor Correction (PFC) and high-speed SMPS
3. Physical Architecture & Durability
The module utilizes a 7.786 x 7.786 mm die with advanced metalisation (Ti/Ni/Ag backside and Al topside) to ensure robust electrical contact and long-term reliability under repetitive surge conditions (p. 5). This architecture allows for a continuous forward current of up to 66A at lower case temperatures, providing a wide safety margin for high-power transients (p. 2).
Conclusion
By replacing standard rectifiers with the QSD-HCS010X500, systems can achieve higher overall efficiency, improved power density, and a drastically simplified thermal management system (p. 1).
Contact Us
Phone: +61 731328687
Email: sales@questsemi.com
