QS66N4SCM120: 1200V 66A N-Channel SiC MOSFET
Datasheet
Fast switching with low EMI/RFI-Low gate charge minimizes switching loss-short circuit withstand rated-Low RDS(On) temperature coefficient for improved efficiency.
SiC MOSFETs are well-suited for applications were high-power density, high-
frequency operation, and improved efficiency are critical. Their characteristics make
them a preferred choice in a variety of modern electronic systems. - Electric Vehicles -
Solar Inverters - Uninterruptible Power Supplies (UPS) - Switched-Mode Power
Supplies.