High Voltage Silicon Carbide Diodes | Quest Semi

High voltage SiC Mosfet bare die and wafer
Datasheets

Products V DS I D
25°C
R DS(on)
25°C
V TH
25°C
V TH
175°C
Qg Package Sample Order Datasheet
QS25SCM65X99
650V
99amp
25mΩ
2V
2V
125.0nC
Bare Die
ORDER
PDF
QS40SCM65X72
650V
72amp
40mΩ
3.2v
2.2v
110.8nC
Bare Die
ORDER
PDF
QS60SCM65X50
650v
50amp
60mΩ
2.8v
2.1v
69.5nC
Bare Die
ORDER
PDF
QS60SCM65X43
650v
43amp
60mΩ
2.8v
2.0v
64.0nC
Bare Die
ORDER
PDF
QS11SCM75X167
750V
167amp
11mΩ
2.6v
1.86v
183.79C
T0247-4
ORDER
PDF
QS50SCM75X58
1200v
58amp
50mΩ
3.2v
2.2v
120.nC
T0247-3
ORDER
PDF
QS65SCM120X48
1200v
48amp
65amΩ
2.9v
2.0v
75nC
T0263-7
ORDER
PDF
QS100SCM120X35
1200V
35amp
100mΩ
3.2v
2.3v
53.0nC
T0263-7
ORDER
PDF
QS200SCM120X19
1200V
19amp
200mΩ
3.2v
2.3v
29.0nC
T0247-4
ORDER
PDF
QS50SCM170X035
1700V
350mA
50Ω
4.4v
3.1v
9.8nC
Bare Die
ORDER
PDF
QS45SCM200X65
2000V
65A
45mΩ
3.5v
2.5v
185.0nc
Bare Die
ORDER
PDF
QS50SCM330X61
3300V
61A
50mΩ
3.0v
2.3v
218.0nc
Bare Die
ORDER
PDF

The very first use of silicon carbide to protect a silicon wafer in 1957 may have been fortuitous, but since then the benefits of silicon carbide have been very much appreciated and taken advantage of in the world of electronics. Today, silicon carbide is still extensively used and here at Quest, one of the leading developers and manufacturers of power semiconductors we produce and supply a range of silicon carbide MOSFETs to meet the ever-growing need for high performance components that can deliver exceptional results.

The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) plays a critical role in many everyday electrical devices, its main function, simply is to control the flow of electricity, so that it may behave as a switch or an amplifier, often within analog circuits, inverters and motor control devices. Benefits of MOSFETs include high input impedance, low power consumption and exceptionally fast switching speeds.

The insulated gate within the SiC MOSFET, the voltage of which determines conductivity of the device facilitates the ability to change conductivity by utilising differing voltages, and despite continual research there has yet to be found a viable and effective alternative to silicon carbide insulation. At Quest we supply a range of high voltage SiC MOSFETs (both Bare Die and Wafer) with a range of voltages from 650v to 3300v of which there are only two other manufacturers offering such a high voltage, trading not just here in Australia but in all the leading electronic component markets around the globe, including Asia, USA and Europe. For innovation, excellence and affordability, look no further than Quest for your Silicon carbide MOSFET needs.