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The QS120C040YL is a 1200V N-channel Silicon Carbide MOSFET housed in a TO-3P plastic package, providing fast switching, low EMI/RFI and a low RDS(ON) temperature coefficient for improved system efficiency in high voltage power conversion.

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QS120C080Y4 | 36A 1200V 80mΩ SiC MOSFET | TO-247

$5.374

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The QS120C080Y4 is a 1200V N-channel Silicon Carbide MOSFET in a fully-insulated TO-247-4L package, delivering fast switching, low capacitance and reduced switching losses for on-board chargers and DC/DC modules.

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QS120C080YL | 36A 1200V 80mΩ SiC MOSFET | TO247-3L

$18.360

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The QS120C080YL is a 1200V N-channel Silicon Carbide MOSFET in a TO-3P package, offering fast switching with low EMI/RFI, low capacitances and a low RDS(ON) temperature coefficient, ideal for on-board chargers and 6.6kW DC/DC modules.

QSIP4115 | 104A 150V 11mΩ Si MOSFET | TO-220

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QS150N03 | 150A 30V 2.5mΩ N-Ch Si MOSFET | TO-220C

$2.247

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The QS150N03 is a 30V N-channel silicon MOSFET rated for 150A continuous current with an ultra-low 2.5mΩ Rds(on), delivering exceptional efficiency in high-current power switching applications. Housed in a robust TO-220C package, it is optimised for industrial power designs, DC-DC converters, motor drives, and battery management systems where low conduction losses are critical.

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QS170C800YL | 7.5A 1700V 800mΩ SiC MOSFET | TO-247

$6.808

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The QS170C800YL is a 1700V N-channel Silicon Carbide (SiC) MOSFET rated for 7.5A continuous drain current with 800mΩ Rds(on) at Vgs=18V. Designed for high-efficiency, high-frequency power conversion in high-voltage industrial drives, traction and energy storage systems, it offers superior switching performance and thermal conductivity versus silicon in a TO-247-3L package. PRELIMINARY.

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QS180N10 | 180A 100V 3.5mΩ N-Ch Si MOSFET | TO-220C

$4.371

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180A 100V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

QSIP4132 | 150A 30V 3.5mΩ Si MOSFET | TO-220

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QS33N10 | 33A 100V 25mΩ N-Ch Si MOSFET | TO-220C

$2.041

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The QS33N10 is a 100V N-channel silicon MOSFET rated for 33A continuous current with 25mΩ Rds(on), optimised for efficient power switching. Housed in a TO-220C package, it delivers low conduction losses for industrial power supplies, motor controllers and UPS systems.

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QS45SCM200X62| 2000V 62A SiC MOSFET Bare Die, 45mΩ Gen2

$88.200

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QS2Q200045BD – 2000V 62A SiC MOSFET Bare Die, 45mΩ Gen2

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QS50N06 | 50A 60V 12mΩ N-Ch Si MOSFET | TO-220C

$1.865

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50A 60V N-channel silicon MOSFET with low Rds(on) in a TO-220C package.

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QS50SCM330U61 | 61A 3300V 50mΩ SiC MOSFET | TO-247

$97.059

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The QS50SCM330U61 is a 3rd generation 3300V/61A Silicon Carbide MOSFET in a TO247-HS 2L package, offering high blocking voltage with low on-resistance, high-speed switching and a 175°C junction temperature capability for demanding high-voltage traction and power conversion systems.

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QS50SCM330X61 | 3300V 61A SiC MOSFET Bare Die, 50mΩ Gen3

$175.000

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The QS50SCM330X61 is a 3300V N-channel Silicon Carbide (SiC) MOSFET rated for 8A continuous drain current with 50mΩ Rds(on) at Vgs=18V. Designed for high-efficiency, high-frequency power conversion in HVDC, rail traction and utility-scale energy storage, it offers superior switching performance and thermal conductivity versus silicon in a TO-247-3L package. PRELIMINARY.

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